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2SC2714
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714
High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications
* * Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 20 4 100 125 -55~125 Unit V V V mA mA mW C C
JEDEC
JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Symbol ICBO IEBO hFE (Note) Cre fT Ccrbb' NF Gpe Test Condition VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 VCE = 6 V, IC = 1 mA VCB = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Min 40 17 Typ. 0.70 550 2.5 23 Max 0.5 0.5 200 30 5.0 pF MHz ps dB dB Unit A A
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200
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2SC2714
L1: 0.8 mm silver plated copper wire, 4 T, 10ID, 8 length
Figure 1
NF, Gpe Test Circuit
y Parameter (typ.)
(1) Common emitter (VCE = 6 V, IE = -1 mA, f = 100 MHz)
Characteristics Input conductance Input capacitance Reverse transfer admittance Phase angle of reverse transfer admittance Forward transfer admittance Phase angle of forward transfer admittance Output conductance Output capacitance Symbol gie Cie yre re |yfe| fe goe Coe Typ. 2.9 10.2 0.33 -90 40 -20 45 1.1 Unit mS pF mS mS S pF
(2)
Common base (VCE = 6 V, IE = -1 mA, f = 100 MHz)
Characteristics Symbol gib Cib yrb rb |yfb| fb gob Cob Typ. 34 -10 0.27 -105 34 165 45 1.1 Unit mS pF mS mS S pF
Input conductance Input capacitance Reverse transfer admittance Phase angle of reverse transfer admittance Forward transfer admittance Phase angle of forward transfer admittance Output conductance Output capacitance
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2SC2714
Marking
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2SC2714
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2SC2714
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2SC2714
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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